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Teledyne DALSA offers customers a truly unmatched toolbox of dozens of proven and patented process modules and techniques.

We offer key surface and bulk micromachining techniques for Si including high aspect ratio and high throughput DRIE, with depths to 875 µm and etch rates up to 35 µm/min for 1:1 aspect ratio cavities. For through silicon vias, our DRIE capabilities include aspect ratios of 23:1 and 90-91° profiles with etch rates of 9 µm/min as well as fine etching with sidewall roughness <90 nm for aspect ratios up to 35:1 with control of vertical profiles (89.7-90.3°) and tilt <0.5°. We also offer other angles such as 60°, providing an alternative to anisotropic wet etch with high throughput and more design flexibility.

We excel in processes for low temperature/high conductivity in-situ doped polysilicon as a structural material and for TSVs.

Our proprietary anhydrous HF release recipes eliminate post-etch stiction and by-product residues. Low stress SiN is another of our specialties, both as protection during anhydrous HF release, and as a structural material to balance stress when combined with other silicon features. We also provide extensive high aspect ratio thick sacrificial or permanent polymer processing both photoimageable and hard mask, and patented techniques for thin film deposition.

Our unique process toolbox also includes solder bumping (including Ni/Pd UBM), CMP, backgrinding, and dicing. The electroless Ni and Pd plating capability we offer on Al film provides the flexibility for both solderable and wire bond finishes on the same surface, as well as allowing tin-based bonding to other wafers. Bonding is an area of particular expertise for us, enabling a wide range of technology integrations; our vast repertoire includes Si-Si, Si-SiO₂, SiO₂-SiO₂, eutectic, solder, thermo-compression, glass frit sealing, anodic, vacuum, plasma-assisted, polymer, and temporary bonding.

We are proud of our toolbox, but even more proud of our mastery of it. The greatest value Teledyne DALSA offers you is our ability to leverage and integrate individual foundry processes to bring your breakthrough MEMS designs into production. Read on to learn more about our technology for integrated MEMS.

Selected Process Modules and Capabilities

Si DRIE High etch rates (40 µm/min) Depth to 875 µm, 80:1 aspect ratio Angle capability (e.g. 60°)	Anhydrous HF Release Proprietary recipes eliminate stiction and residues	Low Stress SiN Mech. Stress = 175 MPa, Breakdown Field >4.8 MV/cm
ISDP Resistivity 0.65 µOhm·cm ISDP Stress = -25 MPa Gradient = 3.0 Mpa/µm	Thick Polymers Coat thickness: <40 µm Develop: aspect ratio 5:1, 1 to 2 µm features	Low Temp SiO2, PECVD, SOG Low Temp SiO2: 300 nm – 1 µm PECVD: 100 nm – 10 µm Clean release in HF SOG: 100 nm to 2.0 µm; fast release in HF
Wafer Bonding Si-Si, Si-SiO2, SiO2-SiO2, eutectic, solder, thermo-compression, glass frit sealing, anodic, vacuum, plasma-assisted, polymer and more	Metals and Plating AlCu, AlSiCu, Ti/TiN, Ge, Cu, Ni, Pd, W, and more Electroless Ni and Pd plating on Al substrates	Grinding and Dicing Membranes to ground 30 µm Pad expose steps Dicing of mechanically released structures, no lid wafer required

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