Semiconductor & MEMS Foundry
CCD
DALSA Semiconductor's 150mm C25 2.5µm CCD process offers buried channel or surface channel operation at up to 15 volts with either two or three polysilicon layers. A modular processing approach allows our foundry customers to adjust process parameters for the most demanding requirements on CTE, charge storage capacity and low dark current. Scanner photolithography permits integration of wafer scale devices. We offer advanced technology such as stitching for large devices and more.
DALSA is proud that our base process is fully tunable. Customers specify the buried channel and barrier implants that suit the application. Channel stops, anti-blooming implants, or other special features can be added. Successful projects have included PMOS CCDs for radiation hardness, the world's higest resolution monolithic device (10.5k x 10.5k, 111 megapixels), and high-resistivity devices.
Typical applications for these products are in scientific, industrial, or even space deployments. Custom variants of this process supply many of the image sensors used in the industry-leading digital cameras of DALSA Corporation's Machine Vision division. NASA's JPL chose DALSA to fabricate the image sensors on the Mars Rovers, which captured the highest-resolution images ever taken of another planet.
To support all our customers' custom CCD processes, we offer a wide range of services from mask manufacturing to complete device characterization.
DALSA Semiconductor operates its CCD Wafer Foundry Service as an independent arm from any of the other DALSA Corporation group of Business Units. Customer information and data confidentialty is assured.
Process Capability Parameters
| C25 CCD Process Spec | |
| Datasheet |  C25 Datasheet |
| Wafer Size | 150 mm (Max. die 10x10 cm) |
| Poly Layers | 2 or 3 |
| Poly Overlaps | 0.5 µm |
| Metal | Single / Double / Triple |
| Projection Aligner | 2.5 µm 1X (MPA-600) |
| Maximum Operating Voltage | 15 V |
| Charge Transfer Efficiency (CTE) | > 99.999% |
| Dark Current | Low (< 1nA/cm2 ) |
| Other |
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| Special Options |
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Support Data
- Design Rules: CCD 2.5, 3.0 µm NMOS Buried-Channel Double/Triple-Poly, Double/Triple Metal Process. New updated design rules available, with significantly expanded details and capabilities. Contact DALSA Semiconductor to receive the expanded document.
Features
DALSA fabricated the world's highest-resolution monolithic image sensor (111 megapixels)
Highlights of our tunable process include low dark current, excellent CTE, and very good yield.
- stitched, wafer-scale devices
- high resistivity
- PMOS CCD for radiation hardness
For more information, contact Sales.
