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PRESS RELEASE: Teledyne DALSA Semiconductor Announces Electrostatic Actuator Integrated Circuit for High Density MEMS/MOEMS Systems

Posted 2/28/2012

WATERLOO, Ontario - February 28, 2012 - Teledyne DALSA Semiconductor, a Teledyne Technologies company, announced today the availability of its DH9685AB Electrostatic Actuator High Voltage Integrated Circuit. Using proprietary High Voltage CMOS/DMOS technology, the DH9685AB is designed for next-generation, high density, small footprint, low power system requirements using MEMS or MOEMS activation with electrostatic forces. This device showcases Teledyne DALSA Semiconductor's suite of product development and manufacturing capabilities for MEMS/CCD/HV-CMOS solutions.

"Sophisticated High Voltage design permits us to offer unbelievably low power consumption where a large number of channels is critical," said Remi Meingan, Senior Product Manager at Teledyne DALSA. "With our advanced BGA Package, the DH9685AB achieves impressive integration with the smallest footprint area per channel."

The DH9685AB extends Teledyne DALSA's industry leading MEMS and MOEMS capability and provides a cost-effective solution for high density systems. It has 96 High Precision, High Voltage Channels up to 240V in a 17x17 mm BGA Package, and is ROHS compliant. It operates through a versatile digital 3-wire interface.

Key Features

  • 240V, 96-Channel, Precision High Voltage 16-Bit DAC with Sample and Hold
  • Very low power consumption below 500 mW
  • 24 selectable quads of 4 High Voltage channels programmable with 4 Low Voltage 16-bit DACs
  • Adjustable HV Output range with reference input
  • Standard SPI®/3-wire serial interface for DAC programming up to 50MHz
  • Highest integration at 3.0 mm2/ch. in BGA package
  • Single polarity Low Voltage power supplies
  • Stable HV output voltage over time
  • Internal Diode for Temperature Monitoring

Product Details and Availability

The DH9685AB samples will be available in Q1 of 2012. To learn more, visit the product page or attend OFC/NFOEC 2012 where details will be presented regarding the DH9685AB Electrostatic Actuator High Voltage Integrated Circuit for next-generation, high density, low power optical system requirements using MOEMS. The presentation will take place on Tuesday, March 6, 2012 from 4:30 to 5:00 pm. More details will be available in Booth 2628 at the Los Angeles Convention Center in Los Angeles, California.

For more information on product specifications, lead time for production, quantities, and pricing, please contact:

Teledyne DALSA Semiconductor
Telephone: +1-450-534-2321 or 1-800-718-9701
Fax: +1-450-534-3201
Email: sales.semi@teledynedalsa.com
Web: www.teledynedalsa.com/semi

About Teledyne DALSA Semiconductor
Located in Bromont, Quebec, Canada, Teledyne DALSA's award winning semiconductor wafer foundry has a proud history of innovation in specialties such as MEMS, CCDs, and high voltage CMOS. As a pure-play foundry, our goal is to deliver innovative foundry capabilities as a manufacturing partner to fabless and fab-lite semiconductor companies to help them succeed with their advanced MEMS or High Voltage Electrostatic Actuator designs. Visit www.teledynedalsa.com/semi/ for more information.

About Teledyne DALSA, Inc.
Teledyne DALSA, a Teledyne Technologies company, is an international leader in high performance digital imaging and semiconductors with approximately 1,000 employees worldwide, headquartered in Waterloo, Ontario, Canada. Established in 1980, the company designs, develops, manufactures and markets digital imaging products and solutions, in addition to providing MEMS products and services. For more information, visit Teledyne DALSA's website at www.teledynedalsa.com.

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All trademarks are registered by their respective companies. Teledyne DALSA reserves the right to make changes at any time without notice.

Media Contact
Heather Neale
Teledyne DALSA
Tel: +1-514-333-1301 ext. 227
Email: heather.neale@teledynedalsa.com

Sales Contacts
Europe & Americas: sales.semi@teledynedalsa.com
Asia: sales.asia@teledynedalsa.com

 

 

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